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BFT92W,115

  • In Stock: 1355
  • Available: 3775

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.84000US $4.84
10+US $4.35600US $43.56
30+US $3.38800US $101.64
100+US $2.78300US $278.30
500+US $2.66200US $1331.00
1000+US $2.42000US $2420.00

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Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

The BFT92W,115 is a high-performance NPN transistor manufactured by NXP Semiconductors, designed primarily for RF (radio frequency) applications. This transistor is particularly well-suited for use in amplifiers and oscillators due to its excellent frequency response and low noise characteristics.

Key Features:

  1. Type: NPN Bipolar Junction Transistor (BJT)
  2. Package: The BFT92W,115 typically comes in a SOT-23 package, which is compact and suitable for surface-mount technology (SMT). This makes it ideal for applications where space is a constraint.
  3. Frequency Range: The transistor is capable of operating effectively at high frequencies, making it suitable for RF applications, including VHF and UHF bands.
  4. Gain: It offers a high current gain (hFE), which is essential for amplifying weak signals in RF circuits.
  5. Power Dissipation: The device can handle a reasonable amount of power dissipation, allowing it to operate efficiently without overheating in typical applications.
  6. Voltage Ratings: The BFT92W,115 has a maximum collector-emitter voltage (Vce) and collector-base voltage (Vcb) that make it suitable for various circuit designs, ensuring reliability under different operating conditions.
  7. Low Noise: The transistor is designed to minimize noise, which is crucial in RF applications to maintain signal integrity.

Applications:

  • RF Amplifiers: Used in various RF amplifier circuits to boost signal strength.
  • Oscillators: Suitable for use in oscillator circuits where stable frequency generation is required.
  • Switching Applications: Can be utilized in switching circuits due to its fast switching capabilities.
  • Signal Processing: Effective in signal processing applications where amplification and low noise are critical.

Electrical Characteristics:

  • Collector Current (Ic): The maximum collector current rating allows for flexibility in design, accommodating various load conditions.
  • Thermal Resistance: The thermal characteristics of the BFT92W,115 ensure that it can operate reliably under different thermal conditions, which is vital for maintaining performance in high-frequency applications.

Conclusion:

The BFT92W,115 from NXP Semiconductors is a versatile and reliable NPN transistor that excels in RF applications. Its combination of high gain, low noise, and compact packaging makes it an excellent choice for engineers looking to design efficient and effective RF circuits. Whether used in amplifiers, oscillators, or switching applications, the BFT92W,115 provides the performance and reliability needed in modern electronic designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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