BFU520WX
- Manufacturer's Part No.:BFU520WX
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- Series:Automotive, AEC-Q101
- Description:RF TRANS NPN 12V 10GHZ SOT323-3
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- Quantity:RFQAdd to RFQ List
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- Available: 16915
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.44880 | US $0.45 |
10+ | US $0.29920 | US $2.99 |
30+ | US $0.22440 | US $6.73 |
100+ | US $0.17952 | US $17.95 |
500+ | US $0.16456 | US $82.28 |
1000+ | US $0.14960 | US $149.60 |
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- Description
- Alternatives
- Shopping Guide
The BFU520WX is a high-frequency NPN transistor manufactured by NXP Semiconductors, designed for RF (radio frequency) applications. It is particularly well-suited for use in low-noise amplifiers, oscillators, and other RF circuits due to its excellent performance characteristics.
Key Features:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package: The BFU520WX is typically housed in a small SOT-23 package, which is a surface-mount technology (SMT) package that allows for compact designs and efficient use of PCB space.
- Frequency Range: The transistor is optimized for high-frequency applications, with a transition frequency (fT) typically around 10 GHz, making it suitable for use in VHF, UHF, and microwave frequency ranges.
- Low Noise Figure: The BFU520WX exhibits a low noise figure, which is crucial for maintaining signal integrity in RF applications, particularly in receiving circuits.
- High Gain: It offers a high current gain (hFE), which allows for effective amplification of weak signals.
- Voltage Ratings: The device has a maximum collector-emitter voltage (VCE) rating of around 30V, making it versatile for various circuit designs.
- Power Dissipation: The BFU520WX can handle a reasonable amount of power dissipation, typically around 300 mW, which is adequate for many RF applications.
- Thermal Stability: The transistor is designed to operate reliably over a wide temperature range, ensuring stable performance in various environmental conditions.
Applications:
- RF Amplifiers: Used in low-noise amplifiers for communication systems, including cellular, satellite, and broadcast applications.
- Oscillators: Suitable for use in RF oscillators, providing stable frequency generation.
- Mixers: Can be employed in RF mixers for signal processing in communication devices.
- Switching Applications: While primarily designed for RF applications, it can also be used in switching circuits due to its fast switching capabilities.
Electrical Characteristics:
- Collector Current (IC): The maximum collector current is typically around 100 mA, allowing for sufficient drive capability in many applications.
- Input and Output Capacitance: The transistor features low input and output capacitance, which is beneficial for maintaining high-frequency performance.
Conclusion:
The BFU520WX from NXP Semiconductors is a versatile and reliable NPN transistor that excels in high-frequency applications. Its combination of low noise, high gain, and compact packaging makes it an ideal choice for engineers designing RF circuits in various communication technologies.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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