BFU690F,115
- Manufacturer's Part No.:BFU690F,115
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- Description:RF TRANS NPN 5.5V 18GHZ 4DFP
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- In Stock: 2999
- Available: 4053
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $44.29000 | US $44.29 |
10+ | US $33.21750 | US $332.18 |
30+ | US $28.78850 | US $863.66 |
100+ | US $25.46675 | US $2546.68 |
500+ | US $23.91660 | US $11958.30 |
1000+ | US $22.14500 | US $22145.00 |
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Type and Configuration: It is an NPN bipolar junction transistor (BJT) designed for RF and microwave applications, offering high gain and low noise.
Electrical Specifications:
- Collector-Emitter Voltage (Vce): Typically rated for up to 3.3V, ensuring safe operation within this voltage range.
- Collector Current (Ic): Capable of handling a maximum collector current, generally specified in datasheets for detailed application suitability.
- Power Gain: High power gain (S21), making it suitable for amplification in RF circuits.
- Noise Figure: Low noise figure, ensuring minimal signal distortion and high signal integrity in RF applications.
Features:
- High Frequency Performance: Optimized for high-frequency operations, making it suitable for applications up to several GHz.
- Low Noise: Designed to provide a low noise figure, enhancing performance in sensitive RF applications such as low-noise amplifiers.
- SiGe Technology: Utilizes silicon-germanium technology, which provides superior performance compared to standard silicon transistors, especially at higher frequencies.
- SOT-323 Package: Comes in a compact, industry-standard SOT-323 package, facilitating easy integration into PCB designs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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