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BFU690F,115

  • In Stock: 18250
  • Available: 4053

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $11.15400US $11.15
10+US $10.03860US $100.39
30+US $7.80780US $234.23
100+US $6.41355US $641.36
500+US $6.13470US $3067.35
1000+US $5.57700US $5577.00

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  • Description
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Description

Type and Configuration: It is an NPN bipolar junction transistor (BJT) designed for RF and microwave applications, offering high gain and low noise.

Electrical Specifications:

  • Collector-Emitter Voltage (Vce): Typically rated for up to 3.3V, ensuring safe operation within this voltage range.
  • Collector Current (Ic): Capable of handling a maximum collector current, generally specified in datasheets for detailed application suitability.
  • Power Gain: High power gain (S21), making it suitable for amplification in RF circuits.
  • Noise Figure: Low noise figure, ensuring minimal signal distortion and high signal integrity in RF applications.

Features:

  • High Frequency Performance: Optimized for high-frequency operations, making it suitable for applications up to several GHz.
  • Low Noise: Designed to provide a low noise figure, enhancing performance in sensitive RF applications such as low-noise amplifiers.
  • SiGe Technology: Utilizes silicon-germanium technology, which provides superior performance compared to standard silicon transistors, especially at higher frequencies.
  • SOT-323 Package: Comes in a compact, industry-standard SOT-323 package, facilitating easy integration into PCB designs.
 
 

 

 

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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