BGX50AE6327HTSA1
- Manufacturer's Part No.:BGX50AE6327HTSA1
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- Description:BRIDGE RECT 1P 70V 140MA SOT143
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- In Stock: 108000
- Available: 959587
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.27810 | US $0.28 |
10+ | US $0.18540 | US $1.85 |
30+ | US $0.13905 | US $4.17 |
100+ | US $0.11124 | US $11.12 |
500+ | US $0.10197 | US $50.99 |
1000+ | US $0.09270 | US $92.70 |
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The BGX50AE6327HTSA1 is a high-frequency transistor manufactured by Infineon Technologies. Transistors are semiconductor devices commonly used for amplification or switching electronic signals. The BGX50AE6327HTSA1 transistor is specifically designed for high-frequency applications, offering excellent performance and reliability in RF (radio frequency) and microwave circuits.
Key Features:
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High-Frequency Operation: The BGX50AE6327HTSA1 transistor is optimized for high-frequency operation, making it suitable for RF and microwave applications where fast signal switching and amplification are required.
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Low Noise Figure: This transistor features a low noise figure, minimizing signal degradation and ensuring high signal-to-noise ratio (SNR) in RF systems, especially in low-power and sensitive applications.
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High Gain: Offers high gain characteristics, amplifying weak signals with minimal distortion and ensuring efficient signal transmission and reception in RF communication systems.
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Broadband Performance: Provides broadband performance across a wide frequency range, enabling versatile usage in various RF and microwave circuits without sacrificing performance.
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High Power Handling: Capable of handling high power levels, making it suitable for power amplifier applications in RF transmitters and other high-power RF systems.
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Low Distortion: Exhibits low distortion characteristics, ensuring faithful reproduction of input signals and maintaining signal integrity in RF amplification and modulation circuits.
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High Reliability: Engineered for high reliability and long-term stability, meeting stringent quality and reliability standards required for critical RF and microwave applications.
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Surface-Mount Package: Packaged in a surface-mount package, providing ease of integration into PCB (Printed Circuit Board) designs and compatibility with automated assembly processes.
Applications:
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RF Amplifiers: Used in RF amplifier circuits for amplifying weak signals in RF receivers, transmitters, and transceivers in wireless communication systems.
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RF Transmitters: Deployed in RF transmitter circuits for modulating and amplifying signals before transmission in wireless communication systems such as cellular networks, Wi-Fi, and Bluetooth.
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Microwave Circuits: Integrated into microwave circuits for amplification, switching, and signal conditioning in microwave communication systems, radar systems, and satellite communication systems.
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Wireless Infrastructure: Utilized in wireless infrastructure equipment such as base stations, repeaters, and access points for amplifying and processing RF signals in cellular and wireless networks.
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Test and Measurement: Used in test and measurement equipment such as spectrum analyzers, network analyzers, and signal generators for signal amplification and conditioning in RF and microwave measurements.
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Broadcasting: Deployed in broadcasting equipment for amplifying and modulating RF signals in radio and television broadcasting systems.
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Military and Aerospace: Integrated into military and aerospace communication systems, radar systems, and electronic warfare (EW) systems for signal amplification and processing in demanding environments.
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Medical Devices: Utilized in medical devices such as MRI (magnetic resonance imaging) systems, RF ablation systems, and medical telemetry devices for RF signal amplification and processing.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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