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BLF6G10LS-200RN:11
- Manufacturer's Part No.:BLF6G10LS-200RN:11
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:RF FET LDMOS 65V 20DB SOT502B
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 1202
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $91.54000 | US $91.54 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Quick RFQ
Product Parameter
- ManufacturerAmpleon
- Manufacturer's Part No.BLF6G10LS-200RN:11
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - RF
- Series
- Part StatusActive
- Transistor TypeLDMOS
- Frequency871.5MHz~891.5MHz
- Gain20dB
- Voltage - Test28V
- Current Rating
- Noise Figure
- Current - Test1.4A
- Power - Output40W
- Voltage - Rated65V
- Package / CaseSOT-502B
- Supplier Device Package
- Factory Lead Time13 Weeks
- Number of Pins
- PackagingTray
- Max Operating Temperature
- Max Power Dissipation
- Base Part NumberBLF6G10
- Element Configuration
- Power Dissipation
- Drain to Source Voltage (Vdss)
- Continuous Drain Current (ID)
- Gate to Source Voltage (Vgs)
- Drain to Source Breakdown Voltage
- Lifecycle Status
- Mount
- Number of Terminations2
- Min Operating Temperature
- Subcategory
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count
- Qualification Status
- Number of Elements1
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Max Output Power
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Radiation Hardening
- ConfigurationSINGLE
- Lead Free
- Surface MountYES
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min65V
- Current Rating (Amps)49A
- Max Frequency
- Voltage - Rated DC
- Input Capacitance
- Power Gain
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Min Breakdown Voltage
- Terminal Finish
- Published2009
- HTS Code
- Reach Compliance Code
- Operating Temperature (Max)
- Power Dissipation-Max (Abs)
- Additional Feature
- Drain Current-Max (Abs) (ID)49A
- Contact Plating
- Pbfree Code
- Termination
- Threshold Voltage
- Dual Supply Voltage
- Nominal Vgs
- Height
- Feedback Cap-Max (Crss)
- Highest Frequency Band
- Weight
- Halogen Free
- Breakdown Voltage
- Length
- Width
- Output Power
- Power Gain-Min (Gp)
- JEDEC-95 Code
- Family
- Mounting Type
- Operating Temperature
- Technology
- Power Dissipation-Max
- FET Type
- Rds On (Max) @ Id, Vgs
- Vgs(th) (Max) @ Id
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Continuous Drain (Id) @ 25°C
- Gate Charge (Qg) (Max) @ Vgs
- Drive Voltage (Max Rds On,Min Rds On)
- Vgs (Max)
- Drain to Source Resistance
- Mounting Feature
- Number of Functions
- Construction
- Power Supplies
- RF/Microwave Device Type
- VSWR-Max
- Input Power-Max (CW)
- Characteristic Impedance
- Reference StandardIEC-60134
- Source Url Status Check Date
- Drain-source On Resistance-Max
- Operating Temperature (Min)
- Mfr
- Channel Type
- Operating Supply Voltage
- Rise Time
- Number of Terminals
- Type
- Supplied Contents
- Turn On Delay Time
- Fall Time (Typ)
- Turn-Off Delay Time
- Polarity
- Collector Emitter Voltage (VCEO)
- Max Collector Current
- Transition Frequency
- Collector Base Voltage (VCBO)
- Emitter Base Voltage (VEBO)
- Collector Current-Max (IC)
- Collector-Emitter Voltage-Max
- Mode of Operation
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- RoHS StatusROHS3 Compliant
- ECCN CodeEAR99
- JESD-30 CodeR-CDFP-F2
- JESD-609 Code
- REACH SVHC
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