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BSC010N04LSATMA1
- Manufacturer's Part No.:BSC010N04LSATMA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 40V 100A TDSON-8
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 193548
- Available: 73548
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $10.20000 | US $10.20 |
10+ | US $9.18000 | US $91.80 |
30+ | US $7.14000 | US $214.20 |
100+ | US $5.86500 | US $586.50 |
500+ | US $5.61000 | US $2805.00 |
1000+ | US $5.10000 | US $5100.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSC010N04LSATMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- Height1.1mm
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingCut Tape (CT)
- Published2003
- Rise Time12ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeno
- SubcategoryFET General Purpose Power
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormFLAT
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Fall Time (Typ)9 ns
- Terminal FinishTin (Sn)
- Factory Lead Time39 Weeks
- Power Dissipation2.5W
- Terminal PositionDUAL
- Threshold Voltage1.2V
- Number of Channels1
- Number of Elements1
- Turn On Delay Time10 ns
- Vgs(th) (Max) @ Id2V @ 250μA
- Turn-Off Delay Time46 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta 139W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations3
- Rds On (Max) @ Id, Vgs1m Ω @ 50A, 10V
- Transistor ApplicationSWITCHING
- Max Dual Supply Voltage40V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)330 mJ
- Continuous Drain Current (ID)100A
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Pulsed Drain Current-Max (IDM)400A
- Drain to Source Breakdown Voltage40V
- Input Capacitance (Ciss) (Max) @ Vds6800pF @ 20V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C38A Ta 100A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PDSO-F3
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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