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BSC014N06NSATMA1

  • Available: 57454

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.66800US $3.67
10+US $3.30120US $33.01
30+US $2.56760US $77.03
100+US $2.10910US $210.91
500+US $2.01740US $1008.70
1000+US $1.83400US $1834.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    BSC014N06NSATMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    OptiMOS™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Height
    1.1mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Cut Tape (CT)
  • Published
    1997
  • Rise Time
    10ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    no
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Terminal Form
    FLAT
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerTDFN
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    11 ns
  • Factory Lead Time
    13 Weeks
  • Power Dissipation
    156W
  • Terminal Position
    DUAL
  • Threshold Voltage
    2.8V
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    23 ns
  • Vgs(th) (Max) @ Id
    2.8V @ 120μA
  • Turn-Off Delay Time
    43 ns
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    2.5W Ta 156W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    1.45m Ω @ 50A, 10V
  • Transistor Application
    SWITCHING
  • Max Dual Supply Voltage
    60V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    30A
  • Gate Charge (Qg) (Max) @ Vgs
    89nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    100A
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Pulsed Drain Current-Max (IDM)
    400A
  • Drain to Source Breakdown Voltage
    60V
  • Input Capacitance (Ciss) (Max) @ Vds
    6500pF @ 30V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Current - Continuous Drain (Id) @ 25°C
    30A Ta 100A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-F3
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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