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BSC037N08NS5ATMA1
- Manufacturer's Part No.:BSC037N08NS5ATMA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 80V 100A 8TDSON
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 500000
- Available: 82335
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $9.60000 | US $9.60 |
10+ | US $8.64000 | US $86.40 |
30+ | US $6.72000 | US $201.60 |
100+ | US $5.52000 | US $552.00 |
500+ | US $5.28000 | US $2640.00 |
1000+ | US $4.80000 | US $4800.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSC037N08NS5ATMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- Height1.1mm
- Weight506.605978mg
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Published2013
- Rise Time10ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormFLAT
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Fall Time (Typ)7 ns
- Terminal FinishTin (Sn)
- Factory Lead Time26 Weeks
- Power Dissipation2.5W
- Terminal PositionDUAL
- Threshold Voltage3V
- Number of Channels1
- Number of Elements1
- Turn On Delay Time14 ns
- Vgs(th) (Max) @ Id3.8V @ 72μA
- Turn-Off Delay Time26 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta 114W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations5
- Rds On (Max) @ Id, Vgs3.7m Ω @ 50A, 10V
- Transistor ApplicationSWITCHING
- Max Dual Supply Voltage80V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)22A
- Gate Charge (Qg) (Max) @ Vgs58nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)100A
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.0037Ohm
- Pulsed Drain Current-Max (IDM)400A
- Drain to Source Breakdown Voltage80V
- Input Capacitance (Ciss) (Max) @ Vds4200pF @ 40V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Current - Continuous Drain (Id) @ 25°C100A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PDSO-F5
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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