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BSC039N06NSATMA1
- Manufacturer's Part No.:BSC039N06NSATMA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 60V 19A TDSON-8
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 176000
- Available: 108763
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $5.52000 | US $5.52 |
10+ | US $4.96800 | US $49.68 |
30+ | US $3.86400 | US $115.92 |
100+ | US $3.17400 | US $317.40 |
500+ | US $3.03600 | US $1518.00 |
1000+ | US $2.76000 | US $2760.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSC039N06NSATMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- Height1.1mm
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingCut Tape (CT)
- Pin Count8
- Published2012
- Rise Time12ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeno
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormFLAT
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Fall Time (Typ)7 ns
- Terminal FinishTin (Sn)
- Factory Lead Time26 Weeks
- Power Dissipation2.5W
- Terminal PositionDUAL
- Threshold Voltage2.1V
- Number of Channels1
- Number of Elements1
- Turn On Delay Time12 ns
- Vgs(th) (Max) @ Id2.8V @ 36μA
- Turn-Off Delay Time20 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta 69W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations5
- Rds On (Max) @ Id, Vgs3.9m Ω @ 50A, 10V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)44 pF
- Max Dual Supply Voltage60V
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)50 mJ
- Continuous Drain Current (ID)100A
- Max Junction Temperature (Tj)150°C
- Drain-source On Resistance-Max0.0039Ohm
- Pulsed Drain Current-Max (IDM)400A
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds2000pF @ 30V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Current - Continuous Drain (Id) @ 25°C19A Ta 100A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PDSO-F5
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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