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BSC046N02KSGAUMA1
- Manufacturer's Part No.:BSC046N02KSGAUMA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 20V 80A TDSON-8
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 161384
- Available: 161384
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.73847 | US $1.74 |
10+ | US $1.15898 | US $11.59 |
30+ | US $0.86923 | US $26.08 |
100+ | US $0.69539 | US $69.54 |
500+ | US $0.63744 | US $318.72 |
1000+ | US $0.57949 | US $579.49 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSC046N02KSGAUMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- Width5.35mm
- Height1.1mm
- Length6.35mm
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Pin Count8
- Published2011
- Rise Time117ns
- Vgs (Max)±12V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs950 mV
- Part StatusActive
- Pbfree Codeno
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormFLAT
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Fall Time (Typ)6 ns
- Terminal FinishTin (Sn)
- Factory Lead Time26 Weeks
- Power Dissipation48W
- Terminal PositionDUAL
- Threshold Voltage950mV
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Number of Elements1
- Turn On Delay Time15 ns
- Vgs(th) (Max) @ Id1.2V @ 110μA
- Turn-Off Delay Time34 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.8W Ta 48W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations5
- Rds On (Max) @ Id, Vgs4.6m Ω @ 50A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)19A
- Gate Charge (Qg) (Max) @ Vgs27.6nC @ 4.5V
- Gate to Source Voltage (Vgs)12V
- Avalanche Energy Rating (Eas)151 mJ
- Continuous Drain Current (ID)80A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.0046Ohm
- Pulsed Drain Current-Max (IDM)200A
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds4100pF @ 10V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Current - Continuous Drain (Id) @ 25°C19A Ta 80A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PDSO-F5
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)3 (168 Hours)
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