BSC067N06LS3G

The BSC067N06LS3G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for high-efficiency power management applications, making it suitable for a variety of uses in power supplies, motor drives, and other electronic circuits.

Key Features:

1. N-Channel Configuration: The BSC067N06LS3G is an N-channel MOSFET, which means it uses electrons as the charge carriers. This configuration typically offers lower on-resistance and higher efficiency compared to P-channel MOSFETs.

2. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 60V, allowing it to handle a wide range of applications without the risk of breakdown.

3. Current Rating: It can handle a continuous drain current (I_D) of up to 67A, making it suitable for high-current applications.

4. On-Resistance (R_DS(on)): The on-resistance is specified at a low value (typically around 6.7 mΩ at V_GS = 10V), which minimizes power loss during operation and enhances thermal performance.

5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 1V to 3V, allowing for easy drive with low-voltage control signals.

6. Package Type: The BSC067N06LS3G is typically housed in a DPAK (TO-252) package, which provides good thermal performance and is suitable for surface mounting.

7. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, which helps in efficient heat dissipation during operation.

8. Fast Switching Speed: This MOSFET is designed for fast switching applications, making it ideal for use in high-frequency circuits.

9. Applications: Common applications include DC-DC converters, synchronous rectification, motor control, and other power management systems.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): Typically around 94W, depending on the thermal management.
• Body Diode Characteristics: The device features an intrinsic body diode, which can conduct in the reverse direction, providing additional functionality in certain applications.

Reliability and Compliance:

Infineon Technologies ensures that the BSC067N06LS3G meets various industry standards for reliability and performance, making it a trusted choice for engineers and designers in the electronics field.

Conclusion:

The BSC067N06LS3G from Infineon Technologies is a robust and efficient N-channel MOSFET that is well-suited for a variety of high-power applications. Its low on-resistance, high current handling capability, and fast switching characteristics make it an excellent choice for modern power electronics designs.