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BSC098N10NS5ATMA1

  • In Stock: 502000
  • Available: 146112

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.59800US $2.60
10+US $1.73200US $17.32
30+US $1.29900US $38.97
100+US $1.03920US $103.92
500+US $0.95260US $476.30
1000+US $0.86600US $866.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    BSC098N10NS5ATMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    OptiMOS™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Height
    1.1mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • Rise Time
    5ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Terminal Form
    FLAT
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerTDFN
  • Case Connection
    DRAIN
  • Terminal Finish
    Tin (Sn)
  • Factory Lead Time
    26 Weeks
  • Power Dissipation
    69W
  • Terminal Position
    DUAL
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    10 ns
  • Vgs(th) (Max) @ Id
    3.8V @ 36μA
  • Turn-Off Delay Time
    17 ns
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    2.5W Ta 69W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    9.8m Ω @ 30A, 10V
  • Transistor Application
    SWITCHING
  • Max Dual Supply Voltage
    100V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    28nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    30 mJ
  • Continuous Drain Current (ID)
    11A
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Pulsed Drain Current-Max (IDM)
    240A
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance (Ciss) (Max) @ Vds
    2100pF @ 50V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Current - Continuous Drain (Id) @ 25°C
    60A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-F5
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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