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BSC100N06LS3G
- Manufacturer's Part No.:BSC100N06LS3G
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- Description:N-Channel 60V 12A 2.2V @ 23uA 10mΩ @ 50A,10V 2.5W PG-TDSON-8 MOSFET RoHS
- Quantity:Buy NowAdd to Cart
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- In Stock: 10000
- Available: 5000
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $1.26060 | US $1.26 |
| 10+ | US $0.84040 | US $8.40 |
| 30+ | US $0.63030 | US $18.91 |
| 100+ | US $0.50424 | US $50.42 |
| 500+ | US $0.46222 | US $231.11 |
| 1000+ | US $0.42020 | US $420.20 |
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- Description
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- Shopping Guide
The BSC100N06LS3G is an N-channel MOSFET from Infineon Technologies, designed for power management applications. This MOSFET features a low on-resistance and is optimized for low voltage applications, providing efficient performance in various switching tasks.
Key Features:
- Low On-Resistance (Rds(on)): The MOSFET has a very low Rds(on) value, ensuring minimal conduction losses and high efficiency in power management circuits.
- High Current Capability: Capable of handling high current loads, making it suitable for demanding power applications.
- Fast Switching: Features fast switching times, ideal for high-frequency switching applications.
- Logic Level Drive: Compatible with logic level drive voltages, allowing it to be driven directly by microcontrollers and other low-voltage control circuits.
- Robust Design: The MOSFET is designed to handle high levels of power dissipation and thermal management, ensuring reliable performance under varying conditions.
- SMD Package: Available in a small SMD package (SuperSO8), suitable for space-constrained applications.
Applications:
- DC-DC converters
- Motor drives
- Power management in portable devices
- Load switches
- Synchronous rectification
- General-purpose switching applications
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
SHIPPING GUIDE
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