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BSC884N03MS G
- Manufacturer's Part No.:BSC884N03MS G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 34V 17A TDSON-8
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3510
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- Available: 3510
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSC884N03MS G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Pin Count8
- Published2011
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormFLAT
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Vgs(th) (Max) @ Id2V @ 250μA
- Qualification StatusNot Qualified
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta 50W Tc
- Reach Compliance Codecompliant
- Number of Terminations5
- Rds On (Max) @ Id, Vgs4.5m Ω @ 30A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min34V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)17A
- Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
- Avalanche Energy Rating (Eas)35 mJ
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)34V
- Drain-source On Resistance-Max0.0054Ohm
- Pulsed Drain Current-Max (IDM)340A
- Input Capacitance (Ciss) (Max) @ Vds2700pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C17A Ta 85A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PDSO-F5
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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