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BSC889N03LSGATMA1
- Manufacturer's Part No.:BSC889N03LSGATMA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 30V 45A TDSON-8
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3687
- Price: please call
- Available: 3687
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSC889N03LSGATMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Published2011
- Rise Time2.2ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormFLAT
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Fall Time (Typ)2.4 ns
- Power Dissipation2.5W
- Terminal PositionDUAL
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Number of Elements1
- Turn On Delay Time2.8 ns
- Vgs(th) (Max) @ Id2.2V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time13 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta 28W Tc
- Number of Terminations5
- Rds On (Max) @ Id, Vgs9m Ω @ 30A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30V
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)13A
- Drain to Source Voltage (Vdss)30V
- Drain-source On Resistance-Max0.009Ohm
- Input Capacitance (Ciss) (Max) @ Vds1300pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C13A Ta 45A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PDSO-F5
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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