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BSD223P L6327
- Manufacturer's Part No.:BSD223P L6327
- Manufacturer:
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- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET 2P-CH 20V 0.39A SOT363
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 2374
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- Available: 2374
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSD223P L6327
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesOptiMOS™
- ECCNEAR99
- FET Type2 P-Channel (Dual)
- HTS Code8541.21.00.95
- PackagingTape & Reel (TR)
- Pin Count6
- Published2002
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Power - Max250mW
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Package / Case6-VSSOP, SC-88, SOT-363
- Terminal FinishMATTE TIN
- Base Part NumberBSD223
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Number of Elements2
- Vgs(th) (Max) @ Id1.2V @ 1.5μA
- Qualification StatusNot Qualified
- Operating Temperature-55°C~150°C TJ
- Reach Compliance Codecompliant
- Number of Terminations6
- Rds On (Max) @ Id, Vgs1.2 Ω @ 390mA, 4.5V
- Feedback Cap-Max (Crss)22 pF
- DS Breakdown Voltage-Min20V
- Reflow Temperature-Max (s)40
- Power Dissipation-Max (Abs)0.25W
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)0.39A
- Gate Charge (Qg) (Max) @ Vgs0.62nC @ 4.5V
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)20V
- Input Capacitance (Ciss) (Max) @ Vds56pF @ 15V
- Current - Continuous Drain (Id) @ 25°C390mA
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PDSO-G6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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