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BSD223P

  • Available: 3569

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    BSD223P
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    OptiMOS™
  • ECCN
    EAR99
  • FET Type
    2 P-Channel (Dual)
  • HTS Code
    8541.21.00.95
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    6
  • Published
    2002
  • FET Feature
    Logic Level Gate
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Power - Max
    250mW
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    6-VSSOP, SC-88, SOT-363
  • Base Part Number
    BSD223
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    1
  • Vgs(th) (Max) @ Id
    1.2V @ 1.5μA
  • Qualification Status
    Not Qualified
  • Operating Temperature
    -55°C~150°C TJ
  • Reach Compliance Code
    compliant
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    1.2 Ω @ 390mA, 4.5V
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    22 pF
  • DS Breakdown Voltage-Min
    20V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Power Dissipation-Max (Abs)
    0.25W
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    0.39A
  • Gate Charge (Qg) (Max) @ Vgs
    0.62nC @ 4.5V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    20V
  • Input Capacitance (Ciss) (Max) @ Vds
    56pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    390mA

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-PDSO-G6
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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