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BSD235NH6327XTSA1

  • In Stock: 90000
  • Available: 777401

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.84470US $1.84
10+US $1.22980US $12.30
30+US $0.92235US $27.67
100+US $0.73788US $73.79
500+US $0.67639US $338.20
1000+US $0.61490US $614.90

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    BSD235NH6327XTSA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    OptiMOS™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    1.25mm
  • Height
    1mm
  • Length
    2mm
  • FET Type
    2 N-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • Rise Time
    3.6ns
  • FET Feature
    Logic Level Gate
  • Part Status
    Active
  • Pbfree Code
    yes
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    6-VSSOP, SC-88, SOT-363
  • Terminal Finish
    Tin (Sn)
  • Base Part Number
    BSD235
  • Factory Lead Time
    10 Weeks
  • Power Dissipation
    500mW
  • Threshold Voltage
    700mV
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    2
  • Reference Standard
    AEC-Q101
  • Turn On Delay Time
    3.8 ns
  • Vgs(th) (Max) @ Id
    1.2V @ 1.6μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    4.5 ns
  • Max Power Dissipation
    500mW
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    350m Ω @ 950mA, 4.5V
  • Max Dual Supply Voltage
    20V
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    0.95A
  • Gate Charge (Qg) (Max) @ Vgs
    0.32nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    12V
  • Continuous Drain Current (ID)
    950mA
  • Max Junction Temperature (Tj)
    150°C
  • Drain-source On Resistance-Max
    0.35Ohm
  • Drain to Source Breakdown Voltage
    20V
  • Input Capacitance (Ciss) (Max) @ Vds
    63pF @ 10V

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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