BSD840NH6327XTSA1
- Manufacturer's Part No.:BSD840NH6327XTSA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET 2N-CH 20V 0.88A SOT363
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 19464
- Available: 765502
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.21384 | US $0.21 |
10+ | US $0.14256 | US $1.43 |
30+ | US $0.10692 | US $3.21 |
100+ | US $0.08554 | US $8.55 |
500+ | US $0.07841 | US $39.21 |
1000+ | US $0.07128 | US $71.28 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSD840NH6327XTSA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- Width1.25mm
- Height1mm
- Length2mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2011
- Rise Time2.2ns
- FET FeatureLogic Level Gate
- Part StatusActive
- Pbfree Codeyes
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / Case6-VSSOP, SC-88, SOT-363
- Terminal FinishTin (Sn)
- Base Part NumberBSD840
- Factory Lead Time10 Weeks
- Power Dissipation500mW
- Threshold Voltage550mV
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Number of Channels2
- Number of Elements2
- Turn On Delay Time1.9 ns
- Vgs(th) (Max) @ Id750mV @ 1.6μA
- Turn-Off Delay Time7.8 ns
- Max Power Dissipation500mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs400m Ω @ 880mA, 2.5V
- Max Dual Supply Voltage20V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)3.5A
- Gate Charge (Qg) (Max) @ Vgs0.26nC @ 2.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)880mA
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.4Ohm
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds78pF @ 10V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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