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BSF045N03MQ3 G
- Manufacturer's Part No.:BSF045N03MQ3 G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 30V 63A WDSON-2
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3849
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- Available: 3849
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSF045N03MQ3 G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Pin Count2
- Published2009
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormNO LEAD
- Operating ModeENHANCEMENT MODE
- Package / Case3-WDSON
- Case ConnectionDRAIN
- Terminal PositionBOTTOM
- Number of Elements1
- Vgs(th) (Max) @ Id2.2V @ 250μA
- Qualification StatusNot Qualified
- Operating Temperature-40°C~150°C TJ
- Reach Compliance Codecompliant
- Number of Terminations2
- Rds On (Max) @ Id, Vgs4.5m Ω @ 20A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Power Dissipation-Max (Abs)28W
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)18A
- Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
- Avalanche Energy Rating (Eas)30 mJ
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)30V
- Drain-source On Resistance-Max0.0059Ohm
- Pulsed Drain Current-Max (IDM)252A
- Input Capacitance (Ciss) (Max) @ Vds2600pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C18A Ta 63A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-MBCC-N2
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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