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BSH108,215
- Manufacturer's Part No.:BSH108,215
- Manufacturer:
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- Series:TrenchMOS™
- Description:MOSFET N-CH 30V 1.9A SOT23
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 51740
- Available: 377269
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $0.21879 | US $0.22 |
| 10+ | US $0.14586 | US $1.46 |
| 30+ | US $0.10939 | US $3.28 |
| 100+ | US $0.08752 | US $8.75 |
| 500+ | US $0.08022 | US $40.11 |
| 1000+ | US $0.07293 | US $72.93 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
- Description
- Alternatives
- Shopping Guide
The BSH108 is a N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. It is designed to provide a high-speed switch for analog and digital signals.
Key Features:
- Drain-Source Voltage: 60V
- Continuous Drain Current: 0.2A
- Threshold Voltage: 0.55V (typ)
- RDS(ON): 8.5 Ohm (typ) at VGS = 10V
Applications:
- Signal switching
- Amplification
- Level shifting
- Load switch
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
SHIPPING GUIDE
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Delivery Time
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