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BSM35GD120DN2

  • In Stock: 1000
  • Available: 1451

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $104.54184US $104.54
10+US $81.31032US $813.10
30+US $69.69456US $2090.84
100+US $63.88668US $6388.67
500+US $61.56353US $30781.77
1000+US $58.07880US $58078.80

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    BSM35GD120DN2
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Modules
  • Series
    -
  • ECCN
    EAR99
  • Input
    Standard
  • Mount
    Screw
  • Width
    45.5mm
  • Height
    17mm
  • Length
    107.5mm
  • IGBT Type
    NPT
  • Pin Count
    17
  • Published
    1999
  • VCEsat-Max
    3.2 V
  • Part Status
    Obsolete
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    120 ns
  • Configuration
    Three Phase Inverter
  • Mounting Type
    Chassis Mount
  • Terminal Form
    UNSPECIFIED
  • NTC Thermistor
    No
  • Number of Pins
    17
  • Package / Case
    Module
  • Case Connection
    ISOLATED
  • Factory Lead Time
    18 Weeks
  • Power Dissipation
    280W
  • Terminal Position
    UPPER
  • Number of Elements
    6
  • Max Collector Current
    50A
  • Max Power Dissipation
    280W
  • Operating Temperature
    150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    17
  • Vce(on) (Max) @ Vge, Ic
    3.2V @ 15V, 35A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    450 ns
  • Transistor Element Material
    SILICON
  • Input Capacitance (Cies) @ Vce
    2nF @ 25V
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Collector Emitter Saturation Voltage
    2.7V
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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