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BSM50GD120DN2G
- Manufacturer's Part No.:BSM50GD120DN2G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT BSM50GD120DN2GBOSA1
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 2400
- Available: 1601
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $172.50000 | US $172.50 |
10+ | US $149.50000 | US $1495.00 |
30+ | US $135.70000 | US $4071.00 |
100+ | US $124.20000 | US $12420.00 |
500+ | US $120.75000 | US $60375.00 |
1000+ | US $115.00000 | US $115000.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSM50GD120DN2G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Modules
- Series-
- ECCNEAR99
- InputStandard
- MountScrew
- Pin Count39
- Published2012
- VCEsat-Max3.7 V
- Part StatusObsolete
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time100 ns
- ConfigurationFull Bridge
- Mounting TypeChassis Mount
- Terminal FormTHROUGH-HOLE
- NTC ThermistorNo
- Number of Pins21
- Package / CaseModule
- Case ConnectionISOLATED
- Power Dissipation400W
- Terminal PositionUPPER
- Number of Elements6
- Max Collector Current72A
- Operating Temperature150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations39
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 50A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)450 ns
- Transistor Element MaterialSILICON
- Current - Collector (Ic) (Max)78A
- Input Capacitance (Cies) @ Vce33nF @ 25V
- Collector Emitter Voltage (VCEO)1.2kV
- Collector Emitter Breakdown Voltage1.2kV
- Collector Emitter Saturation Voltage2.5V
- Voltage - Collector Emitter Breakdown (Max)1200V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-XUFM-T39
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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