BSO200N03
- Manufacturer's Part No.:BSO200N03
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET 2N-CH 30V 6.6A 8DSO
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 3236
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSO200N03
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesOptiMOS™
- Time@Peak Reflow Temperature-Max (s)40
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Part StatusObsolete
- Operating Temperature-55°C~150°C TJ
- MountSurface Mount
- Number of Pins8
- PackagingTape & Reel (TR)
- SubcategoryFET General Purpose Power
- Number of Terminations8
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Lead FreeLead Free
- Published2011
- Current Rating6.6A
- Additional FeatureAVALANCHE RATED
- Voltage - Rated DC30V
- Contact PlatingTin
- JEDEC-95 CodeMS-012
- Max Power Dissipation1.4W
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Transistor ApplicationSWITCHING
- Power Dissipation1.56W
- Turn On Delay Time2.9 ns
- Turn-Off Delay Time12 ns
- Operating ModeENHANCEMENT MODE
- Drain-source On Resistance-Max0.02Ohm
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID)7A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- FET Type2 N-Channel (Dual)
- Vgs(th) (Max) @ Id2V @ 13μA
- Input Capacitance (Ciss) (Max) @ Vds1010pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs8nC @ 5V
- FET FeatureLogic Level Gate
- Rise Time2.6ns
- Fall Time (Typ)2.6 ns
- Feedback Cap-Max (Crss)56 pF
- Rds On (Max) @ Id, Vgs20m Ω @ 7.9A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
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