BSO215C
- Manufacturer's Part No.:BSO215C
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:SIPMOS®
- Description:MOSFET N/P-CH 20V 3.7A 8SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- Available: 2838
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSO215C
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesSIPMOS®
- ECCNEAR99
- MountSurface Mount
- FET TypeN and P-Channel
- HTS Code8541.29.00.95
- PackagingTape & Reel (TR)
- Pin Count8
- Published1999
- FET FeatureLogic Level Gate
- Part StatusObsolete
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating3.1A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionDUAL
- Additional FeatureLOGIC LEVAL
- Number of Elements2
- Vgs(th) (Max) @ Id2V @ 10μA
- Qualification StatusNot Qualified
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Reach Compliance Codeunknown
- Number of Terminations8
- Rds On (Max) @ Id, Vgs100m Ω @ 3.7A, 10V
- DS Breakdown Voltage-Min20V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs11.5nC @ 10V
- Avalanche Energy Rating (Eas)26 mJ
- Continuous Drain Current (ID)3.7A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)20V
- Drain-source On Resistance-Max0.1Ohm
- Pulsed Drain Current-Max (IDM)14.8A
- Input Capacitance (Ciss) (Max) @ Vds246pF @ 25V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PDSO-G8
- JESD-609 Codee0
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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