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BSO303PNTMA1

  • Available: 3097

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    BSO303PNTMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    OptiMOS™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    2 P-Channel (Dual)
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • Rise Time
    12.9ns
  • FET Feature
    Logic Level Gate
  • Part Status
    Obsolete
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Fall Time (Typ)
    39.3 ns
  • Power Dissipation
    2W
  • Additional Feature
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Number of Elements
    2
  • Turn On Delay Time
    10.6 ns
  • Vgs(th) (Max) @ Id
    2V @ 100μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    55.4 ns
  • Max Power Dissipation
    2W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    21m Ω @ 8.2A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    30V
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    72.5nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    97 mJ
  • Continuous Drain Current (ID)
    8.2A
  • Drain to Source Voltage (Vdss)
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    1761pF @ 25V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS non-compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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