BSO615N
- Manufacturer's Part No.:BSO615N
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:SIPMOS®
- Description:MOSFET 2N-CH 60V 2.6A 8SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 3146
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSO615N
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesSIPMOS®
- ECCNEAR99
- MountSurface Mount
- FET Type2 N-Channel (Dual)
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Published2000
- Rise Time15ns
- FET FeatureLogic Level Gate
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating2.6A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Terminal FinishTin/Lead (Sn/Pb)
- Base Part NumberBSO615
- Power Dissipation2W
- Number of Elements2
- Vgs(th) (Max) @ Id2V @ 20μA
- Voltage - Rated DC60V
- Qualification StatusNot Qualified
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs150m Ω @ 2.6A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)60 mJ
- Continuous Drain Current (ID)2.6A
- Peak Reflow Temperature (Cel)235
- Drain-source On Resistance-Max0.15Ohm
- Pulsed Drain Current-Max (IDM)10.4A
- Input Capacitance (Ciss) (Max) @ Vds380pF @ 25V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-609 Codee0
- Moisture Sensitivity Level (MSL)3 (168 Hours)
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