BSP129E6327
- Manufacturer's Part No.:BSP129E6327
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:SIPMOS®
- Description:MOSFET N-CH 240V 350MA SOT223
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 3619
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSP129E6327
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesSIPMOS®
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Pin Count4
- Published2001
- Rise Time10ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- FET FeatureDepletion Mode
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating280mA
- Number of Pins4
- Package / CaseTO-261-4, TO-261AA
- Case ConnectionDRAIN
- Terminal FinishTin/Lead (Sn/Pb)
- Power Dissipation1.8W
- Terminal PositionDUAL
- Number of Elements1
- Vgs(th) (Max) @ Id1V @ 108μA
- Voltage - Rated DC240V
- Qualification StatusNot Qualified
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max1.8W Ta
- Number of Terminations4
- Rds On (Max) @ Id, Vgs6 Ω @ 350mA, 10V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)0.2A
- Gate Charge (Qg) (Max) @ Vgs5.7nC @ 5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)350mA
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max20Ohm
- Pulsed Drain Current-Max (IDM)0.6A
- Input Capacitance (Ciss) (Max) @ Vds108pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)0V 10V
- Current - Continuous Drain (Id) @ 25°C350mA Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-609 Codee0
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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