Image is for your reference only, please check specifications for details
iconCompare
icon

BSP297H6327XTSA1

  • In Stock: 3590
  • Available: 225689

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.18140US $1.18
10+US $0.78760US $7.88
30+US $0.59070US $17.72
100+US $0.47256US $47.26
500+US $0.43318US $216.59
1000+US $0.39380US $393.80

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ
  • esd
  • as
  • iso14001
  • iso9001
  • D&B

Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    BSP297H6327XTSA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    SIPMOS®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    6.7mm
  • Height
    1.6mm
  • Length
    6.5mm
  • Current
    66A
  • Voltage
    200V
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Cut Tape (CT)
  • Pin Count
    4
  • Published
    2008
  • Rise Time
    3.8ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    1.4 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Termination
    SMD/SMT
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    4
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-261-4, TO-261AA
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    19 ns
  • Terminal Finish
    Tin (Sn)
  • Factory Lead Time
    10 Weeks
  • Power Dissipation
    1.8W
  • Terminal Position
    DUAL
  • Threshold Voltage
    1.4V
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Number of Elements
    1
  • Turn On Delay Time
    5.2 ns
  • Vgs(th) (Max) @ Id
    1.8V @ 400μA
  • Dual Supply Voltage
    200V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    49 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    1.8W Ta
  • Number of Terminations
    4
  • Rds On (Max) @ Id, Vgs
    1.8 Ω @ 660mA, 10V
  • Max Dual Supply Voltage
    200V
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    16.1nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    600mA
  • Drain to Source Breakdown Voltage
    200V
  • Input Capacitance (Ciss) (Max) @ Vds
    357pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    660mA Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

  • Professional Platform

  • Full-speed Delivery

  • Wide Variety of Products

  • 365 Days of Quality Assurance