BSP297H6327XTSA1
- Manufacturer’s Part#:BSP297H6327XTSA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:SIPMOS®
- ECAD Model:
- Description:MOSFET N-CH 200V 660MA SOT-223
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 3590
- Available: 225689
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.18140 | US $1.18 |
10+ | US $0.78760 | US $7.88 |
30+ | US $0.59070 | US $17.72 |
100+ | US $0.47256 | US $47.26 |
500+ | US $0.43318 | US $216.59 |
1000+ | US $0.39380 | US $393.80 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #BSP297H6327XTSA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesSIPMOS®
- ECCNEAR99
- MountSurface Mount
- Width6.7mm
- Height1.6mm
- Length6.5mm
- Current66A
- Voltage200V
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingCut Tape (CT)
- Pin Count4
- Published2008
- Rise Time3.8ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.4 V
- Part StatusActive
- Pbfree Codeyes
- TerminationSMD/SMT
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins4
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-261-4, TO-261AA
- Case ConnectionDRAIN
- Fall Time (Typ)19 ns
- Terminal FinishTin (Sn)
- Factory Lead Time10 Weeks
- Power Dissipation1.8W
- Terminal PositionDUAL
- Threshold Voltage1.4V
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Turn On Delay Time5.2 ns
- Vgs(th) (Max) @ Id1.8V @ 400μA
- Dual Supply Voltage200V
- Radiation HardeningNo
- Turn-Off Delay Time49 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max1.8W Ta
- Number of Terminations4
- Rds On (Max) @ Id, Vgs1.8 Ω @ 660mA, 10V
- Max Dual Supply Voltage200V
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs16.1nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)600mA
- Drain to Source Breakdown Voltage200V
- Input Capacitance (Ciss) (Max) @ Vds357pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C660mA Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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