BSP318SH6327XTSA1
- Manufacturer's Part No.:BSP318SH6327XTSA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:SIPMOS®
- Description:MOSFET N-CH 60V 2.6A
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 6000
- Available: 239798
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $50.00000 | US $50.00 |
10+ | US $37.50000 | US $375.00 |
30+ | US $32.50000 | US $975.00 |
100+ | US $28.75000 | US $2875.00 |
500+ | US $27.00000 | US $13500.00 |
1000+ | US $25.00000 | US $25000.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSP318SH6327XTSA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesSIPMOS®
- ECCNEAR99
- MountSurface Mount
- Width3.5mm
- Height1.8mm
- Length6.5mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count4
- Published1999
- Rise Time15ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.6 V
- Part StatusActive
- Pbfree Codeyes
- TerminationSMD/SMT
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time75 ns
- Terminal FormGULL WING
- Number of Pins4
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-261-4, TO-261AA
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)15 ns
- Factory Lead Time10 Weeks
- Power Dissipation1.8W
- Terminal PositionDUAL
- Threshold Voltage1.6V
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Number of Channels1
- Number of Elements1
- Turn On Delay Time12 ns
- Vgs(th) (Max) @ Id2V @ 20μA
- Dual Supply Voltage60V
- Radiation HardeningNo
- Turn-Off Delay Time20 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max1.8W Ta
- Number of Terminations4
- Rds On (Max) @ Id, Vgs90m Ω @ 2.6A, 10V
- Max Dual Supply Voltage60V
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)60 mJ
- Continuous Drain Current (ID)2.6A
- Manufacturer Package IdentifierPG-SOT223-4
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds380pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C2.6A Tj
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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