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BSS123,215

  • In Stock: 338263
  • Available: 1272399

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.05907US $0.06
10+US $0.03938US $0.39
30+US $0.02953US $0.89
100+US $0.02363US $2.36
500+US $0.02166US $10.83
1000+US $0.01969US $19.69

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Description

The BSS123,215 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Nexperia, a well-known semiconductor company. This component is designed for various applications in electronic circuits, particularly in switching and amplification tasks.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: Typically available in a small SOT-23 package, which is a surface-mount device (SMD) that allows for efficient use of space on printed circuit boards (PCBs).
  3. Voltage Rating: The BSS123 can handle a maximum drain-source voltage (V_DS) of around 60V, making it suitable for a variety of low to medium voltage applications.
  4. Current Rating: It has a continuous drain current (I_D) rating of approximately 170 mA, which allows it to drive small loads effectively.
  5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 1V to 3V, which means it can be turned on with relatively low gate voltage, making it compatible with low-voltage logic levels.
  6. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation.
  7. Switching Speed: The BSS123 is known for its fast switching capabilities, making it ideal for high-speed applications.

Applications:

  • Switching Circuits: Used in power management circuits, where it can act as a switch to control the flow of current.
  • Signal Amplification: Suitable for amplifying weak signals in various electronic devices.
  • Level Shifting: Can be used to interface between different voltage levels in digital circuits.
  • LED Drivers: Commonly employed in driving LED lights due to its efficient switching characteristics.

Electrical Characteristics:

  • Maximum Gate-Source Voltage (V_GS): Typically rated at ±20V.
  • Thermal Resistance: The thermal resistance junction-to-ambient (RθJA) is low, allowing for effective heat dissipation during operation.
  • Operating Temperature Range: The device can operate in a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.

Conclusion:

The BSS123,215 from Nexperia is a versatile and efficient N-channel MOSFET that is widely used in electronic applications due to its compact size, low on-resistance, and ability to handle moderate voltage and current levels. Its characteristics make it a popular choice among engineers and designers for creating reliable and efficient electronic circuits.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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