BSS123,215
- Manufacturer's Part No.:BSS123,215
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- Series:TrenchMOS™
- Description:MOSFET N-CH 100V 150MA SOT-23
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- In Stock: 2000
- Available: 1272399
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.04590 | US $0.05 |
10+ | US $0.03060 | US $0.31 |
30+ | US $0.02295 | US $0.69 |
100+ | US $0.01836 | US $1.84 |
500+ | US $0.01683 | US $8.42 |
1000+ | US $0.01530 | US $15.30 |
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- Description
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The BSS123,215 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Nexperia, a well-known semiconductor company. This component is designed for various applications in electronic circuits, particularly in switching and amplification tasks.
Key Features:
- Type: N-channel MOSFET
- Package: Typically available in a small SOT-23 package, which is a surface-mount device (SMD) that allows for efficient use of space on printed circuit boards (PCBs).
- Voltage Rating: The BSS123 can handle a maximum drain-source voltage (V_DS) of around 60V, making it suitable for a variety of low to medium voltage applications.
- Current Rating: It has a continuous drain current (I_D) rating of approximately 170 mA, which allows it to drive small loads effectively.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 1V to 3V, which means it can be turned on with relatively low gate voltage, making it compatible with low-voltage logic levels.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation.
- Switching Speed: The BSS123 is known for its fast switching capabilities, making it ideal for high-speed applications.
Applications:
- Switching Circuits: Used in power management circuits, where it can act as a switch to control the flow of current.
- Signal Amplification: Suitable for amplifying weak signals in various electronic devices.
- Level Shifting: Can be used to interface between different voltage levels in digital circuits.
- LED Drivers: Commonly employed in driving LED lights due to its efficient switching characteristics.
Electrical Characteristics:
- Maximum Gate-Source Voltage (V_GS): Typically rated at ±20V.
- Thermal Resistance: The thermal resistance junction-to-ambient (RθJA) is low, allowing for effective heat dissipation during operation.
- Operating Temperature Range: The device can operate in a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.
Conclusion:
The BSS123,215 from Nexperia is a versatile and efficient N-channel MOSFET that is widely used in electronic applications due to its compact size, low on-resistance, and ability to handle moderate voltage and current levels. Its characteristics make it a popular choice among engineers and designers for creating reliable and efficient electronic circuits.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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