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BSS123LT1G

  • In Stock: 240000
  • Available: 1755611

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.08343US $0.08
10+US $0.05562US $0.56
30+US $0.04172US $1.25
100+US $0.03337US $3.34
500+US $0.03059US $15.30
1000+US $0.02781US $27.81

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Description

The BSS123LT1G is a small-signal N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for use in a wide range of electronic applications requiring low power switching, amplification, or voltage level shifting. The MOSFET is housed in a compact SOT-23 surface-mount package, making it suitable for space-constrained PCB (Printed Circuit Board) designs.

Key Features:

  • N-Channel Enhancement Mode: The BSS123LT1G is an N-channel MOSFET operating in the enhancement mode, meaning it conducts when a positive voltage is applied to its gate terminal.
  • Low Threshold Voltage: With a low threshold voltage, this MOSFET can be easily turned on with a relatively small gate-to-source voltage, making it suitable for low-voltage applications.
  • Low ON-Resistance: The MOSFET exhibits low ON-resistance (RDS(ON)), resulting in minimal conduction losses and efficient power management in switching applications.
  • High Switching Speed: It features fast switching characteristics, allowing for rapid turn-on and turn-off transitions, which is advantageous in high-frequency switching circuits.
  • High Current Handling Capability: Despite its small size, the BSS123LT1G can handle moderate currents, making it suitable for various low-power and medium-power applications.
  • Wide Operating Voltage Range: It supports a wide operating voltage range, enabling compatibility with different voltage levels commonly encountered in electronic systems.
  • ESD Protection: The MOSFET offers electrostatic discharge (ESD) protection, enhancing its robustness and reliability in handling transient voltage events.

Applications:

  • Switching Circuits: Used in electronic switches, relays, and power management circuits for controlling the flow of current or voltage in various applications.
  • Signal Amplification: Employed in signal amplification stages of audio amplifiers, sensor interfaces, and other analog circuitry requiring voltage amplification.
  • Level Shifting: Utilized for voltage level shifting tasks in digital logic circuits, I/O interfaces, and communication protocols to interface between devices operating at different voltage levels.
  • Load Switching: Integrated into load switching circuits for controlling the power supply to loads such as LEDs, motors, solenoids, and other electrical components.
  • Battery Management: Incorporated into battery protection circuits, battery chargers, and power management systems for efficient battery utilization and charging control.
  • LED Drivers: Deployed as part of LED driver circuits to regulate the current flowing through LEDs in lighting applications, display panels, and backlighting systems.
  • Voltage Regulation: Used in voltage regulator circuits to regulate output voltages in power supplies, voltage regulators, and DC-DC converters.
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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