BSS123WQ-7-F

The BSS123WQ-7-F is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. This component is designed for various applications in electronic circuits, particularly in switching and amplification tasks.

Key Features:

1. Type: N-channel MOSFET
2. Package: The BSS123WQ-7-F is typically housed in a SOT-23 package, which is a small, surface-mount device (SMD) that allows for efficient use of space on printed circuit boards (PCBs).
3. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for a wide range of applications where moderate voltage handling is required.
4. Current Rating: The maximum continuous drain current (I_D) is around 200mA, which allows it to handle small to moderate loads effectively.
5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage typically ranges from 1V to 3V, which means it can be turned on with relatively low gate voltage, making it suitable for low-voltage applications.
6. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage (V_GS) of 10V, which helps in minimizing power loss during operation.
7. Switching Speed: The BSS123WQ-7-F features fast switching capabilities, making it ideal for high-speed applications.
8. Thermal Characteristics: It has a thermal resistance (junction-to-ambient) that allows for efficient heat dissipation, which is crucial for maintaining performance and reliability in various operating conditions.

Applications:

The BSS123WQ-7-F is commonly used in:

• Switching Power Supplies: For efficient power management and conversion.
• Signal Switching: In digital circuits where rapid switching is required.
• Load Switching: For controlling loads in various electronic devices.
• Level Shifting: In interfacing different voltage levels in mixed-signal applications.

Electrical Characteristics:

• Gate-Source Voltage (V_GS): Maximum of ±20V.
• Body Diode Characteristics: The device includes an intrinsic body diode, which can be utilized in applications requiring reverse current flow.

Conclusion:

The BSS123WQ-7-F from Diodes Incorporated is a versatile and efficient N-channel MOSFET that is well-suited for a variety of electronic applications. Its compact size, low on-resistance, and ability to operate at moderate voltages make it a popular choice among engineers and designers looking for reliable switching solutions in their circuits.