BSS138-7-F

The BSS138-7-F is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. It is designed for low-voltage applications and is commonly used in switching and amplification circuits. Here’s a detailed description of its key features and specifications:

General Characteristics:

• Type: N-channel MOSFET
• Package: Typically available in a small SOT-23 package, which is a surface-mount device (SMD) that allows for efficient use of PCB space.
• Pin Configuration: The SOT-23 package usually has three pins, which are designated as Gate (G), Drain (D), and Source (S).

Electrical Specifications:

• Maximum Drain-Source Voltage (V_DS): The BSS138 can handle a maximum V_DS of 50V, making it suitable for a variety of applications where moderate voltage levels are present.
• Continuous Drain Current (I_D): It can support a continuous drain current of up to 220 mA at a temperature of 25°C, which is adequate for many low-power applications.
• Gate Threshold Voltage (V_GS(th)): The gate threshold voltage typically ranges from 0.8V to 1.5V, indicating the minimum gate-to-source voltage required to turn the MOSFET on.
• R_DS(on): The on-resistance (R_DS(on)) is typically around 3.5 ohms at a V_GS of 10V, which contributes to lower power losses during operation.

Performance Characteristics:

• Switching Speed: The BSS138 is known for its fast switching capabilities, making it suitable for high-speed applications.
• Thermal Resistance: The thermal resistance from junction to ambient (RθJA) is relatively low, allowing for efficient heat dissipation during operation.
• Safe Operating Area (SOA): The device is designed to operate within a safe area, ensuring reliability and longevity in various applications.

Applications:

The BSS138-7-F is widely used in:

• Switching Regulators: For efficient power management in DC-DC converters.
• Level Shifting: In interfacing between different voltage levels in digital circuits.
• Signal Switching: For controlling signals in various electronic devices.
• Load Switching: In applications where it is necessary to control larger loads with a smaller control signal.

Additional Features:

• RoHS Compliant: The BSS138-7-F is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly.
• Low Gate Drive Power: The device requires minimal gate drive power, which is advantageous in battery-operated devices.

Conclusion:

The BSS138-7-F from Diodes Incorporated is a versatile and efficient N-channel MOSFET suitable for a wide range of applications, particularly in low-voltage and low-power environments. Its compact size, combined with its robust electrical characteristics, makes it a popular choice among engineers and designers in the electronics industry.