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BSS138PW,115

  • In Stock: 300000
  • Available: 1515007

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.05655US $0.06
10+US $0.03770US $0.38
30+US $0.02827US $0.85
100+US $0.02262US $2.26
500+US $0.02073US $10.36
1000+US $0.01885US $18.85

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Description

The BSS138PW,115 is a small-signal N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Nexperia. MOSFETs are semiconductor devices commonly used for switching and amplifying electronic signals in various applications. The BSS138PW,115 is specifically designed for low-voltage, low-power applications, offering efficient switching and low on-state resistance.

Key Features:

  • N-Channel Enhancement Mode: The BSS138PW,115 operates in enhancement mode, meaning it requires a positive voltage at the gate terminal to allow current flow between the source and drain terminals.

  • Low On-State Resistance: This MOSFET features a low on-state resistance (RDS(on)), resulting in minimal power dissipation and voltage drop across the device when it is in the conducting state.

  • Low Threshold Voltage: The MOSFET has a low threshold voltage, allowing it to switch on with relatively low gate-source voltage, making it suitable for low-voltage applications.

  • Small SOT323 Surface-Mount Package: Packaged in a small SOT323 surface-mount package, offering space-saving benefits and compatibility with automated assembly processes.

  • High-Speed Switching: Provides high-speed switching performance, enabling rapid switching transitions and minimizing switching losses in electronic circuits.

  • Low Gate Charge: Features low gate charge characteristics, reducing the time required for the gate voltage to switch the MOSFET between its on and off states, further enhancing switching efficiency.

  • High Continuous Drain Current: Capable of handling high continuous drain currents, making it suitable for applications requiring moderate power handling capabilities.

  • RoHS Compliance: Manufactured using materials and processes compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental sustainability and safety.

Applications:

  • Voltage Level Shifting: Used for level shifting and signal translation between different voltage domains in digital circuits, I2C interfaces, and sensor interfacing applications.

  • Switching Circuits: Integrated into switching circuits such as power switches, load switches, and relay drivers for controlling the flow of current in electronic systems.

  • Low-Voltage Power Management: Deployed in low-voltage power management circuits such as DC-DC converters, voltage regulators, and battery management systems.

  • Motor Control: Utilized in motor control circuits for driving small DC motors, stepper motors, and brushless DC motors in applications such as robotics and automation.

  • LED Drivers: Integrated into LED driver circuits for controlling the brightness of LEDs in lighting applications, displays, and backlighting systems.

  • Audio Amplifiers: Used in audio amplifier circuits for signal switching, muting, and impedance matching in audio equipment such as headphones, speakers, and portable audio devices.

  • Portable Devices: Deployed in portable electronic devices such as smartphones, tablets, and wearables for power management, signal switching, and voltage regulation.

  • Sensor Interfaces: Integrated into sensor interface circuits for signal conditioning, amplification, and switching in sensor-based applications such as automotive sensors, industrial sensors, and environmental sensors.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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