BSS138W-7-F

The BSS138W-7-F is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. It is designed for low-voltage applications and is particularly suitable for switching and amplification purposes in various electronic circuits.

Key Features:

1. Type: N-channel MOSFET
2. Package: The BSS138W-7-F is typically available in a SOT-23 package, which is a small, surface-mount package that allows for efficient use of PCB space.
3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 50V, making it suitable for a wide range of applications.
4. Current Rating: It can handle a continuous drain current (I_D) of up to 220mA, which is adequate for many low-power applications.
5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 0.8V and 1.5V, allowing it to be driven by low-voltage logic levels.
6. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 3.5 ohms at V_GS = 10V, which helps in minimizing power loss during operation.
7. Switching Speed: The BSS138W-7-F features fast switching capabilities, making it suitable for high-speed applications.
8. Temperature Range: It operates effectively over a wide temperature range, typically from -55°C to +150°C, ensuring reliability in various environmental conditions.

Applications:

The BSS138W-7-F is commonly used in:

• Switching Regulators: For efficient power management in DC-DC converters.
• Level Shifting: In interfacing between different voltage levels in digital circuits.
• Signal Switching: For controlling signals in various electronic devices.
• Load Switching: In applications where it is necessary to control the power to a load.

Electrical Characteristics:

• Gate-Source Voltage (V_GS): Maximum of ±20V.
• Drain-Source Breakdown Voltage (V(BR)DSS): Minimum of 50V.
• Input Capacitance (C_iss): Typically around 30pF, which contributes to its fast switching performance.

Conclusion:

The BSS138W-7-F from Diodes Incorporated is a versatile and efficient N-channel MOSFET that is well-suited for a variety of low-voltage applications. Its compact size, low on-resistance, and fast switching capabilities make it a popular choice among engineers and designers in the electronics industry.