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BSS138

  • In Stock: 61
  • Available: 438000
  • Updated: 1 Day 4 HRS ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.12360US $0.12
10+US $0.08240US $0.82
30+US $0.06180US $1.85
100+US $0.04944US $4.94
500+US $0.04532US $22.66
1000+US $0.04120US $41.20

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Description

The BSS138 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for low-voltage applications and is particularly popular in switching and amplification circuits. Here’s a detailed description of its features and specifications:

Physical Characteristics:

  • Package Type: The BSS138 is typically available in a TO-92 package, which is a cylindrical plastic package with three leads. This makes it suitable for through-hole mounting on printed circuit boards (PCBs).
  • Dimensions: The TO-92 package has a standard size, making it easy to handle and integrate into various electronic designs.

Electrical Specifications:

  • Drain-Source Voltage (V_DS): The BSS138 can handle a maximum drain-source voltage of 50V, making it suitable for a wide range of applications.
  • Gate-Source Voltage (V_GS): The maximum gate-source voltage is ±20V, allowing for flexibility in control signal levels.
  • Continuous Drain Current (I_D): The device can conduct a continuous drain current of up to 220mA at a temperature of 25°C, which is adequate for many low-power applications.
  • R_DS(on): The on-resistance (R_DS(on)) is typically around 3.5 ohms at a gate-source voltage of 10V, which ensures efficient operation with minimal power loss during switching.

Performance Characteristics:

  • Threshold Voltage (V_GS(th)): The threshold voltage, which is the minimum gate-source voltage required to turn the MOSFET on, is typically between 0.8V and 1.5V. This low threshold allows for easy interfacing with low-voltage logic levels.
  • Switching Speed: The BSS138 features fast switching capabilities, making it suitable for high-speed applications. The rise and fall times are typically in the nanosecond range, which is beneficial for digital circuits.

Applications:

  • Level Shifting: The BSS138 is often used in level shifting applications, where it can convert signals between different voltage levels, such as interfacing 5V logic with 3.3V systems.
  • Switching Circuits: It is commonly employed in low-power switching applications, such as driving small loads, controlling relays, or in power management circuits.
  • Signal Amplification: The device can also be used in analog applications for signal amplification due to its high input impedance and low output capacitance.

Thermal Characteristics:

  • Junction-to-ambient Thermal Resistance (θJA): The thermal resistance is typically around 250°C/W, which indicates how well the device can dissipate heat. Proper thermal management is essential to ensure reliable operation, especially under high load conditions.

Conclusion:

The BSS138 from ON Semiconductor is a versatile and reliable N-channel MOSFET that is well-suited for a variety of low-voltage applications. Its combination of low on-resistance, fast switching speed, and ability to handle moderate current makes it a popular choice among engineers and hobbyists alike. Whether used in switching, amplification, or level shifting, the BSS138 provides a robust solution for modern electronic designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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