BSS138
- Manufacturer's Part No.:BSS138
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- Description:MOSFET N-CH 50V 220MA SOT-23
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- In Stock: 61
- Available: 438000
- Updated: 1 Day 4 HRS ago
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.12360 | US $0.12 |
10+ | US $0.08240 | US $0.82 |
30+ | US $0.06180 | US $1.85 |
100+ | US $0.04944 | US $4.94 |
500+ | US $0.04532 | US $22.66 |
1000+ | US $0.04120 | US $41.20 |
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The BSS138 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for low-voltage applications and is particularly popular in switching and amplification circuits. Here’s a detailed description of its features and specifications:
Physical Characteristics:
- Package Type: The BSS138 is typically available in a TO-92 package, which is a cylindrical plastic package with three leads. This makes it suitable for through-hole mounting on printed circuit boards (PCBs).
- Dimensions: The TO-92 package has a standard size, making it easy to handle and integrate into various electronic designs.
Electrical Specifications:
- Drain-Source Voltage (V_DS): The BSS138 can handle a maximum drain-source voltage of 50V, making it suitable for a wide range of applications.
- Gate-Source Voltage (V_GS): The maximum gate-source voltage is ±20V, allowing for flexibility in control signal levels.
- Continuous Drain Current (I_D): The device can conduct a continuous drain current of up to 220mA at a temperature of 25°C, which is adequate for many low-power applications.
- R_DS(on): The on-resistance (R_DS(on)) is typically around 3.5 ohms at a gate-source voltage of 10V, which ensures efficient operation with minimal power loss during switching.
Performance Characteristics:
- Threshold Voltage (V_GS(th)): The threshold voltage, which is the minimum gate-source voltage required to turn the MOSFET on, is typically between 0.8V and 1.5V. This low threshold allows for easy interfacing with low-voltage logic levels.
- Switching Speed: The BSS138 features fast switching capabilities, making it suitable for high-speed applications. The rise and fall times are typically in the nanosecond range, which is beneficial for digital circuits.
Applications:
- Level Shifting: The BSS138 is often used in level shifting applications, where it can convert signals between different voltage levels, such as interfacing 5V logic with 3.3V systems.
- Switching Circuits: It is commonly employed in low-power switching applications, such as driving small loads, controlling relays, or in power management circuits.
- Signal Amplification: The device can also be used in analog applications for signal amplification due to its high input impedance and low output capacitance.
Thermal Characteristics:
- Junction-to-ambient Thermal Resistance (θJA): The thermal resistance is typically around 250°C/W, which indicates how well the device can dissipate heat. Proper thermal management is essential to ensure reliable operation, especially under high load conditions.
Conclusion:
The BSS138 from ON Semiconductor is a versatile and reliable N-channel MOSFET that is well-suited for a variety of low-voltage applications. Its combination of low on-resistance, fast switching speed, and ability to handle moderate current makes it a popular choice among engineers and hobbyists alike. Whether used in switching, amplification, or level shifting, the BSS138 provides a robust solution for modern electronic designs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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