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BSS159N E6327

  • Available: 3966

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    BSS159N E6327
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    SIPMOS®
  • ECCN
    EAR99
  • FET Type
    N-Channel
  • HTS Code
    8541.21.00.95
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    3
  • Published
    2006
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • FET Feature
    Depletion Mode
  • Part Status
    Obsolete
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Vgs(th) (Max) @ Id
    2.4V @ 26μA
  • Qualification Status
    Not Qualified
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    360mW Ta
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    3.5 Ω @ 160mA, 10V
  • Feedback Cap-Max (Crss)
    5.9 pF
  • DS Breakdown Voltage-Min
    60V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    0.23A
  • Gate Charge (Qg) (Max) @ Vgs
    2.9nC @ 5V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    60V
  • Input Capacitance (Ciss) (Max) @ Vds
    44pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    0V 10V
  • Current - Continuous Drain (Id) @ 25°C
    230mA Ta

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS non-compliant
  • JESD-30 Code
    R-PDSO-G3
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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