BSS670S2LH6327XTSA1
- Manufacturer's Part No.:BSS670S2LH6327XTSA1
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- Series:OptiMOS™
- Description:MOSFET N-CH 55V 540MA SOT23
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- In Stock: 36500
- Available: 1203931
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $4.00000 | US $4.00 |
10+ | US $3.60000 | US $36.00 |
30+ | US $2.80000 | US $84.00 |
100+ | US $2.30000 | US $230.00 |
500+ | US $2.20000 | US $1100.00 |
1000+ | US $2.00000 | US $2000.00 |
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- Description
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The BSS670S2LH6327XTSA1 is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for various applications in power management, switching, and amplification due to its efficient performance characteristics.
Key Features:
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Type: N-channel MOSFET
- This type of MOSFET allows current to flow from the drain to the source when a positive voltage is applied to the gate.
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Voltage Rating:
- The BSS670S2LH6327XTSA1 typically has a high breakdown voltage, making it suitable for applications that require handling significant voltage levels without failure.
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Current Rating:
- It can handle substantial continuous drain current, which is essential for applications that require high power handling capabilities.
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RDS(on):
- The on-resistance (RDS(on)) is low, which minimizes power loss during operation and enhances efficiency. This is particularly important in battery-powered devices and energy-efficient applications.
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Package Type:
- The device is usually packaged in a compact surface-mount format, which allows for easy integration into modern electronic circuits and helps save space on printed circuit boards (PCBs).
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Thermal Performance:
- The MOSFET is designed to operate efficiently at elevated temperatures, with a thermal resistance that allows for effective heat dissipation.
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Switching Speed:
- The BSS670S2LH6327XTSA1 features fast switching capabilities, making it suitable for high-frequency applications, such as in switching power supplies and motor control circuits.
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Gate Threshold Voltage:
- The gate threshold voltage is optimized for low-voltage drive applications, allowing it to be easily controlled by standard logic levels.
Applications:
- Power Management: Used in DC-DC converters, power supplies, and battery management systems.
- Motor Control: Suitable for driving motors in various applications, including robotics and automotive systems.
- Signal Switching: Can be used in signal routing and switching applications due to its fast response time.
- Consumer Electronics: Commonly found in devices like laptops, smartphones, and other portable electronics where space and efficiency are critical.
Conclusion:
The BSS670S2LH6327XTSA1 from Infineon Technologies is a versatile and efficient N-channel MOSFET that meets the demands of modern electronic applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it an ideal choice for engineers looking to optimize performance in power management and control systems.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
SHIPPING GUIDE
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