BSS806NH6327XTSA1
- Manufacturer's Part No.:BSS806NH6327XTSA1
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- Series:OptiMOS™
- Description:MOSFET N-CH 20V 2.3A SOT23
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- In Stock: 5000
- Available: 907269
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.20460 | US $0.20 |
10+ | US $0.13640 | US $1.36 |
30+ | US $0.10230 | US $3.07 |
100+ | US $0.08184 | US $8.18 |
500+ | US $0.07502 | US $37.51 |
1000+ | US $0.06820 | US $68.20 |
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- Description
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The BSS806NH6327XTSA1 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for high-efficiency switching applications and is particularly suitable for use in power management systems, including DC-DC converters, motor drives, and other power electronic circuits.
Key Features:
- Type: N-channel MOSFET
- Package: The BSS806NH6327XTSA1 is typically housed in a compact surface-mount package, which allows for efficient thermal management and space-saving designs. The specific package type is often a SOT-23 or similar, which is common for low-power applications.
- Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating, typically around 60V, making it suitable for a variety of applications that require moderate voltage handling.
- Current Rating: It can handle a continuous drain current (I_D) of up to 6A, depending on the thermal conditions and the PCB layout, which allows it to drive loads effectively.
- R_DS(on): The on-resistance (R_DS(on)) is low, often in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is designed to be low, allowing the MOSFET to be driven by standard logic levels, which is beneficial for interfacing with microcontrollers and other digital logic devices.
- Switching Speed: The BSS806NH6327XTSA1 features fast switching capabilities, making it ideal for high-frequency applications where rapid turn-on and turn-off are required.
- Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a specified maximum junction temperature (T_J) that allows for reliable performance in demanding environments.
Applications:
- Power Management: Used in DC-DC converters, voltage regulators, and power supplies to efficiently switch power.
- Motor Control: Suitable for driving small motors in various applications, including robotics and automation.
- Load Switching: Can be used for switching loads in consumer electronics and industrial applications.
Electrical Characteristics:
- Gate-Source Voltage (V_GS): The maximum gate-source voltage is typically around ±20V, ensuring safe operation within specified limits.
- Capacitance: The input capacitance (C_iss) and output capacitance (C_oss) values are optimized for fast switching, contributing to the overall efficiency of the device.
Conclusion:
The BSS806NH6327XTSA1 from Infineon Technologies is a versatile and efficient N-channel MOSFET that is well-suited for a wide range of applications in power electronics. Its combination of low on-resistance, high current handling capability, and fast switching performance makes it an excellent choice for designers looking to optimize their power management solutions.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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