BSS83PH6327XTSA1
- Manufacturer's Part No.:BSS83PH6327XTSA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:SIPMOS®
- Description:MOSFET P-CH 60V 0.33A SOT23
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 21000
- Available: 820866
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.21930 | US $0.22 |
10+ | US $0.14620 | US $1.46 |
30+ | US $0.10965 | US $3.29 |
100+ | US $0.08772 | US $8.77 |
500+ | US $0.08041 | US $40.21 |
1000+ | US $0.07310 | US $73.10 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSS83PH6327XTSA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesSIPMOS®
- ECCNEAR99
- MountSurface Mount
- Width1.3mm
- Height1.1mm
- Length2.9mm
- FET TypeP-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count3
- Published1999
- Rise Time71ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Contact PlatingTin
- Fall Time (Typ)61 ns
- Factory Lead Time10 Weeks
- Power Dissipation360mW
- Terminal PositionDUAL
- Threshold Voltage-1.5V
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Number of Channels1
- Number of Elements1
- Turn On Delay Time23 ns
- Vgs(th) (Max) @ Id2V @ 80μA
- Radiation HardeningNo
- Turn-Off Delay Time56 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max360mW Ta
- Number of Terminations3
- Rds On (Max) @ Id, Vgs2 Ω @ 330mA, 10V
- Feedback Cap-Max (Crss)9 pF
- Max Dual Supply Voltage-60V
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs3.57nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)-330mA
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)60V
- Drain-source On Resistance-Max3Ohm
- Manufacturer Package IdentifierPG-SOT23-3-5
- Drain to Source Breakdown Voltage-60V
- Input Capacitance (Ciss) (Max) @ Vds78pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C330mA Ta
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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