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BSS84-7-F

  • In Stock: 20000
  • Available: 1957333

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.03305US $0.03
10+US $0.02203US $0.22
30+US $0.01652US $0.50
100+US $0.01322US $1.32
500+US $0.01212US $6.06
1000+US $0.01102US $11.02

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  • Description
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Description

The BSS84-7-F is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. It is designed for low-voltage applications and is particularly suitable for switching and amplification tasks in various electronic circuits.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The BSS84-7-F typically comes in a SOT-23 package, which is a small, surface-mount package that allows for efficient use of space on printed circuit boards (PCBs).
  3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low to moderate voltage applications.
  4. Current Rating: It can handle a continuous drain current (I_D) of approximately 0.5A, which is adequate for many low-power applications.
  5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 0.8V to 2.0V, allowing it to be driven by low-voltage logic levels.
  6. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage (V_GS) of 10V, which helps in minimizing power loss during operation.
  7. Switching Speed: The BSS84-7-F features fast switching capabilities, making it suitable for high-speed applications.
  8. Thermal Characteristics: It has a low thermal resistance, which helps in managing heat dissipation during operation.

Applications:

The BSS84-7-F is commonly used in various applications, including:

  • Switching Regulators: It can be used in power management circuits to switch power on and off efficiently.
  • Signal Switching: Ideal for routing signals in communication devices and other electronic systems.
  • Level Shifting: Useful in interfacing different voltage levels in mixed-signal applications.
  • Load Switching: Can be employed to control loads in consumer electronics, automotive applications, and industrial equipment.

Electrical Characteristics:

  • Maximum Gate-Source Voltage (V_GS): ±20V
  • Maximum Power Dissipation (P_D): Typically around 300mW, depending on the thermal management of the PCB.
  • Operating Temperature Range: The device can operate in a wide temperature range, typically from -55°C to +150°C.

Conclusion:

The BSS84-7-F from Diodes Incorporated is a versatile and efficient N-channel MOSFET that is well-suited for a variety of low-voltage applications. Its compact size, low on-resistance, and fast switching capabilities make it a popular choice among engineers and designers looking to optimize their electronic circuits.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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