BSS8402DW-7-F

• Dual N-Channel MOSFET in DFN-8 package.

Key Features:

• Low On-Resistance: Maximum Rds(on) of 23 mΩ at Vgs = 4.5 V.
• High Current Capability: Each MOSFET can handle up to 6.2 A continuous drain current.
• Fast Switching: Low gate charge (Qg) of 6.5 nC and low capacitance (Ciss) of 480 pF.
• Dual N-Channel Configuration: Saves board space and simplifies circuit design.
• Good Thermal Performance: RθJA of 50 °C/W and RθJC of 12 °C/W.
• Surface Mount Package: Suitable for high-density designs.

Applications:

• Power management in portable devices
• DC-DC converters
• Load switching
• Motor control