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BSZ042N04NSGATMA1
- Manufacturer's Part No.:BSZ042N04NSGATMA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 40V 40A TSDSON-8
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 182224
- Available: 182224
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.41282 | US $1.41 |
10+ | US $0.94188 | US $9.42 |
30+ | US $0.70641 | US $21.19 |
100+ | US $0.56513 | US $56.51 |
500+ | US $0.51803 | US $259.02 |
1000+ | US $0.47094 | US $470.94 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.BSZ042N04NSGATMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Pin Count8
- Published2003
- Rise Time3.4ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeno
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormNO LEAD
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerVDFN
- Case ConnectionDRAIN
- Fall Time (Typ)4.2 ns
- Terminal FinishTin (Sn)
- Factory Lead Time18 Weeks
- Power Dissipation69W
- Terminal PositionDUAL
- Additional FeatureAVALANCHE RATED, HIGH VOLTAGE
- Number of Elements1
- Turn On Delay Time14 ns
- Vgs(th) (Max) @ Id4V @ 36μA
- Turn-Off Delay Time20 ns
- Qualification StatusNot Qualified
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.1W Ta 69W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations5
- Rds On (Max) @ Id, Vgs4.2m Ω @ 20A, 10V
- Transistor ApplicationSWITCHING
- Max Dual Supply Voltage40V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs46nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)150 mJ
- Continuous Drain Current (ID)40A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.0042Ohm
- Pulsed Drain Current-Max (IDM)160A
- Input Capacitance (Ciss) (Max) @ Vds3700pF @ 20V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C40A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PDSO-N5
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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