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BSZ215CHXTMA1

  • Available: 182640

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.53615US $1.54
10+US $1.02410US $10.24
30+US $0.76808US $23.04
100+US $0.61446US $61.45
500+US $0.56326US $281.63
1000+US $0.51205US $512.05

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    BSZ215CHXTMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    Automotive, AEC-Q101, OptiMOS™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    N and P-Channel Complementary
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • FET Feature
    Logic Level Gate, 2.5V Drive
  • Part Status
    Active
  • Pbfree Code
    yes
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Configuration
    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Terminal Form
    NO LEAD
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerTDFN
  • Case Connection
    DRAIN
  • Terminal Finish
    Tin (Sn)
  • Factory Lead Time
    18 Weeks
  • Terminal Position
    DUAL
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    1.4V @ 110μA
  • Max Power Dissipation
    2.5W
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    55m Ω @ 5.1A, 4.5V
  • Max Dual Supply Voltage
    -20V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    5.1A
  • Gate Charge (Qg) (Max) @ Vgs
    2.8nC @ 4.5V
  • Avalanche Energy Rating (Eas)
    11 mJ
  • Continuous Drain Current (ID)
    3.2A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    20V
  • Drain-source On Resistance-Max
    0.055Ohm
  • Pulsed Drain Current-Max (IDM)
    20A
  • Input Capacitance (Ciss) (Max) @ Vds
    419pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    5.1A 3.2A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    S-PDSO-N5
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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