BSZ440N10NS3GATMA1
- Manufacturer's Part No.:BSZ440N10NS3GATMA1
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- Series:OptiMOS™
- Description:MOSFET N-CH 100V 18A TSDSON-8
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- Quantity:Buy NowAdd to Cart
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- In Stock: 30000
- Available: 242320
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.69216 | US $0.69 |
10+ | US $0.46144 | US $4.61 |
30+ | US $0.34608 | US $10.38 |
100+ | US $0.27686 | US $27.69 |
500+ | US $0.25379 | US $126.90 |
1000+ | US $0.23072 | US $230.72 |
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- Description
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The BSZ440N10NS3GATMA1 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for applications requiring efficient power management and switching capabilities, making it suitable for a variety of uses in power supplies, motor drives, and other electronic circuits.
Key Features:
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N-Channel Configuration: The BSZ440N10NS3GATMA1 is an N-channel MOSFET, which means it uses electrons as the charge carriers, providing high conductivity and efficiency.
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Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, allowing it to handle significant voltage levels in various applications.
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Current Rating: The device can handle a continuous drain current (I_D) of up to 44A, making it suitable for high-power applications.
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R_DS(on): The on-resistance (R_DS(on)) is low, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing overall efficiency.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy driving with standard logic levels.
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Package Type: The BSZ440N10NS3GATMA1 is housed in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.
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Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, which helps in maintaining lower operating temperatures during high-load conditions.
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Fast Switching Speed: This MOSFET is designed for fast switching applications, making it ideal for use in high-frequency circuits.
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Robustness: The device is designed to withstand high levels of stress, making it reliable for demanding applications.
Applications:
- Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
- Motor Control: Suitable for driving motors in various applications, including automotive and industrial.
- DC-DC Converters: Ideal for use in buck, boost, and other converter topologies.
- Lighting: Can be used in LED drivers and other lighting applications.
Conclusion:
The BSZ440N10NS3GATMA1 from Infineon Technologies is a versatile and efficient N-channel MOSFET that excels in high-power applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it a preferred choice for engineers looking to optimize performance in power electronics.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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