BUK761R7-40E,118

The BUK761R7-40E,118 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Nexperia, a well-known semiconductor company. This device is designed for various applications, including power management, motor control, and switching applications, where efficiency and reliability are critical.

Key Features:

1. Type: N-channel MOSFET
2. Package: The BUK761R7-40E,118 typically comes in a TO-220 package, which is a standard package for power devices, providing good thermal performance and ease of mounting.
3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 40V, making it suitable for low to medium voltage applications.
4. Current Rating: It can handle a continuous drain current (I_D) of up to 76A, which allows it to drive high loads effectively.
5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 7.5 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.
6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 2V to 4V, which means it can be driven by standard logic levels, making it versatile for various control circuits.
7. Thermal Characteristics: The TO-220 package allows for effective heat dissipation, with a thermal resistance junction-to-case (RθJC) that ensures the device can operate safely under high load conditions.
8. Switching Speed: The BUK761R7-40E,118 features fast switching capabilities, making it suitable for high-frequency applications.

Applications:

• Power Supply Circuits: Used in DC-DC converters and power management systems.
• Motor Control: Ideal for driving motors in various applications, including automotive and industrial.
• Switching Applications: Suitable for use in electronic switches and relay replacements.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): Typically around 94W, depending on the cooling conditions.
• Safe Operating Area (SOA): The device is designed to operate within specified limits to prevent damage during transient conditions.

Conclusion:

The BUK761R7-40E,118 from Nexperia is a robust and efficient N-channel MOSFET that offers high current handling, low on-resistance, and fast switching capabilities, making it an excellent choice for a wide range of power electronic applications. Its design and specifications cater to the needs of modern electronic systems, ensuring reliability and performance in demanding environments.