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C4D02120A

  • In Stock: 649
  • Available: 4656

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.05040US $2.05
10+US $1.84536US $18.45
30+US $1.43528US $43.06
100+US $1.17898US $117.90
500+US $1.12772US $563.86
1000+US $1.02520US $1025.20

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  • Description
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Description

The C4D02120A is a high-performance silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Wolfspeed, a leading company in the field of wide bandgap semiconductor technology. This particular device is designed for high-efficiency power conversion applications, making it suitable for use in various sectors, including renewable energy systems, electric vehicles, and industrial power supplies.

Key Features:

  1. Voltage Rating: The C4D02120A typically has a maximum drain-source voltage (V_DS) rating of around 1200 volts, allowing it to handle high-voltage applications effectively.

  2. Current Rating: It can support continuous drain current (I_D) ratings of up to 40 amps, making it capable of managing significant power levels in various applications.

  3. Low On-Resistance: One of the standout features of this MOSFET is its low on-resistance (R_DS(on)), which minimizes conduction losses and enhances overall efficiency. This characteristic is crucial for applications where thermal management and energy efficiency are paramount.

  4. Fast Switching Speed: The C4D02120A is designed for fast switching capabilities, which reduces switching losses and improves the performance of power converters. This feature is particularly beneficial in high-frequency applications.

  5. Thermal Performance: The device is built to handle high temperatures, with a maximum junction temperature (T_J) rating that allows it to operate reliably in demanding environments. Its thermal characteristics enable effective heat dissipation, which is essential for maintaining performance and longevity.

  6. Package Type: The C4D02120A is typically available in a TO-247 package, which provides a robust and reliable physical structure for mounting and heat dissipation. This package design is favored in power electronics for its ease of handling and thermal management capabilities.

  7. Gate Drive Requirements: The MOSFET has specific gate drive requirements that allow for efficient control and operation. It is compatible with standard gate drive circuits, making it easier to integrate into existing designs.

Applications:

The C4D02120A is well-suited for a variety of applications, including:

  • Power Inverters: Used in solar inverters and other renewable energy systems to convert DC to AC power efficiently.
  • Electric Vehicles: Employed in the power electronics of electric and hybrid vehicles for motor control and battery management systems.
  • Industrial Power Supplies: Utilized in switch-mode power supplies (SMPS) and other industrial applications where high efficiency and reliability are critical.

Conclusion:

Overall, the C4D02120A from Wolfspeed represents a significant advancement in power semiconductor technology, offering high efficiency, reliability, and performance for demanding applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it an excellent choice for engineers looking to enhance the performance of their power electronic systems.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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