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C4D20120H

  • In Stock: 4198
  • Available: 4156

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $21.68000US $21.68
10+US $16.26000US $162.60
30+US $14.09200US $422.76
100+US $12.46600US $1246.60
500+US $11.70720US $5853.60
1000+US $10.84000US $10840.00

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Description

The C4D20120H is a high-performance silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Wolfspeed, a leading company in the field of wide bandgap semiconductor technology. This particular device is designed for high-efficiency power conversion applications, making it suitable for use in various sectors, including renewable energy systems, electric vehicles, and industrial power supplies.

Key Features:

  1. Voltage Rating: The C4D20120H has a maximum drain-source voltage (V_DS) rating of 1200 volts, allowing it to handle high-voltage applications effectively.

  2. Current Rating: It can support a continuous drain current (I_D) of up to 40 amps, making it capable of managing significant power levels in demanding environments.

  3. Low On-Resistance: One of the standout features of this MOSFET is its low on-resistance (R_DS(on)), which minimizes conduction losses and enhances overall efficiency. This characteristic is crucial for applications where thermal management and energy efficiency are paramount.

  4. Fast Switching Speed: The C4D20120H is designed for fast switching capabilities, which reduces switching losses and improves the performance of power converters. This feature is particularly beneficial in high-frequency applications.

  5. Thermal Performance: The device is built to operate efficiently at elevated temperatures, with a high thermal conductivity that aids in heat dissipation. This allows for reliable operation in harsh environments.

  6. Package Type: The C4D20120H is typically available in a TO-247 package, which provides a robust and reliable physical structure for mounting and heat dissipation. The package design also facilitates easy integration into various circuit layouts.

  7. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is optimized for compatibility with standard gate drive voltages, ensuring ease of use in various circuit designs.

Applications:

The C4D20120H is ideal for a range of applications, including:

  • DC-DC Converters: Its efficiency and fast switching capabilities make it suitable for use in isolated and non-isolated DC-DC converters.
  • Inverters: The device is commonly used in solar inverters and other renewable energy systems, where high efficiency and reliability are critical.
  • Motor Drives: It can be employed in electric vehicle motor drives and industrial motor control applications, where high power and efficiency are required.
  • Power Supplies: The C4D20120H is also suitable for use in high-performance power supply units, including those used in telecommunications and data centers.

Conclusion:

Overall, the C4D20120H from Wolfspeed represents a significant advancement in power semiconductor technology, offering high voltage and current ratings, low on-resistance, and fast switching capabilities. Its robust design and thermal performance make it a preferred choice for engineers looking to enhance the efficiency and reliability of their power electronic systems.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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