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CM600DY-24T

  • Available: 2908

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    Mitsubishi Electric
  • Manufacturer's Part No.
    CM600DY-24T
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Modules
  • Series
    -
  • RoHS
    Details
  • Brand
    Mitsubishi Electric
  • Product
    IGBT Silicon Modules
  • Subcategory
    IGBTs
  • Product Type
    IGBT Modules
  • Product Category
    IGBT Modules
  • Factory Pack QuantityFactory Pack Quantity
    10
  • Technology
    Si
  • Configuration
    Dual
  • Mounting Style
    Screw
  • Pd - Power Dissipation
    6250 W
  • Maximum Operating Temperature
    + 150 C
  • Minimum Operating Temperature
    - 40 C
  • Collector- Emitter Voltage VCEO Max
    1200 V
  • Collector-emitter saturation voltage
    1.75 V
  • Gate-emitter leakage current
    0.5 uA
  • Maximum Gate Emitter Voltage
    20 V
  • Continuous collector current at 25 C
    600 A

Environmental & Export Classifications

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